File:Bv rdson.png

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Original file(1,500 × 1,050 pixels, file size: 82 KB, MIME type: image/png)

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Summary[edit]

Cyril BUTTAY - plotted using gnuplot, source file available by email: cyril DOT buttay AT free DOT fr

This plot represents the specific resistance of MOSFETs versus their breakdown voltage. The dots are the values estimated from the datasheets of the following manufacturers: International Rectifier, ST Microelectronics, Infineon. Only the transistors in D2PAK package have been considered, with an estimated 30 mm² die size.

The "ideal" curve is the specific resistance of a single silicon layer that can withstand the given breakdown voltage. Its equation is Rdson=5.93.10-9.Vbr2.5, and comes from B. JAYANT BALIGA, "Power semiconductor devices", PWS publishing company, 1996

 
This plot was created with Gnuplot.

)"

set xlabel "Breakdown Voltage (V)" set format y '%3.1s %c'#{/Symbol W}' set format x "%3.0s %cV" set logscale xy

  1. output file name

set output "bv_rdson.eps" plot [10:2000][100e-6:10] 5.93e-9*(x**2.5) ls 3 title 'Ideal MOSFET',\ 'mos_data.txt' using 1:($2*0.3) ls 2 with points title 'Commercially available MOSFETs (estimated specific resistance)' }}

Dataset[edit]

gnuplot expects to find the data in a file named 'mos_data.txt'. As mentioned above, the data comes from various manufacturers, but I forgot to write down the corresponding devices reference numbers...

 
This plot was created with Gnuplot.

post processing[edit]

convert -density 300 bv_rdson.eps bv_rdson.png

Licensing[edit]

I, the copyright holder of this work, hereby publish it under the following licenses:
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This file is licensed under the Creative Commons Attribution-Share Alike 2.5 Generic, 2.0 Generic and 1.0 Generic license.
You are free:
  • to share – to copy, distribute and transmit the work
  • to remix – to adapt the work
Under the following conditions:
  • attribution – You must give appropriate credit, provide a link to the license, and indicate if changes were made. You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use.
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Date/TimeThumbnailDimensionsUserComment
current08:24, 25 January 2012Thumbnail for version as of 08:24, 25 January 20121,500 × 1,050 (82 KB)CyrilB~commonswiki (talk | contribs)The "ideal" curve on previous figures was plotted using the following equation: 1.63e-8.Vbr^2.5. However, this equation is for P-devices (see B.J.Baliga "power semiconductor devices", PWS , ISBN 0-534-94098-6, 1995 p 373). For N devices, the constant is 5
20:47, 3 March 2011Thumbnail for version as of 20:47, 3 March 20111,500 × 1,050 (88 KB)CyrilB~commonswiki (talk | contribs)Correction of the y-axis label from ohm.cm-2 to ohm.cm2
18:13, 11 February 2006Thumbnail for version as of 18:13, 11 February 20061,500 × 1,050 (37 KB)CyrilB~commonswiki (talk | contribs)Cyril BUTTAY - plotted using gnuplot, source file available by email: cyril DOT buttay AT free DOT fr This plot represents the specific resistance of MOSFETs versus their breakdown voltage. The dots are the values estimated from the datasheets of the fol

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